Work

False Turn-on Failure and Protection of p-gate GaN HEMT in MHz Class-E Resonant Inverter

Year: 2025

Type: conference-paper

Source: IEEE Applied Power Electronics Conference and Exposition (APEC)

DOI: 10.1109/apec48143.2025.10977431

Authors: Ziheng Liu, Ju Gao, Hongjie Peng, Jiayin He, Jinyan Wang, Maojun Wang

Institution: Peking University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China

OpenAlex ID: W4409992507

FWCI: 2.3

Cites: 13

Cited by: 1

Related to: 10