Work

Development and Validation of Repetitive Transient Gate Overvoltage Rating for GaN HEMTs

Year: 2025

Type: conference-paper

Source: IEEE Applied Power Electronics Conference and Exposition (APEC)

DOI: 10.1109/apec48143.2025.10977031

Authors: Ricardo Garcia, Angel Espinoza, Siddhesh Gajare, Shengke Zhang

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4409992841

FWCI:

Cites: 16

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Related to: 10