Work

Wet etch clean-up of plasma damage for 1.68 kV breakdown in NiO/β-Ga2O3 chlorine-etched PN diodes

Year: 2025

Type: article

Source: Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

DOI: 10.1116/6.0004289

Authors: Audrey Rose Gutierrez, Joseph A. Spencer, Alan G. Jacobs, Yuan Qin, Jenifer R. Hajzus, Hannah N. Masten, Emma Rocco, Karl D. Hobart, Travis J. Anderson, Yuhao Zhang, Akito Kuramata, Marko J. Tadjer

Institutions: National Academies of Sciences, Engineering, and Medicine, United States Naval Research Laboratory, Virginia Tech, Novel Crystal Technology, Inc. (Japan)

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Research Council, Office of Naval Research, Office of Naval Research Global

OpenAlex ID: W4410003150

FWCI: 2.39

Cites: 56

Cited by: 15

Related to: 10