Work

Enhanced growth temperature window and Sb doping of rutile GeO 2 enabled by graded buffer layers

Year: 2025

Type: article

Abstract: Rutile-structured germanium dioxide (r-GeO 2 ) has garnered attention as a next-generation ultrawide-bandgap material owing to its potential for ambipolar doping and high breakdown field. In this study, we investigated the growth of single-phase r-GeO 2 thin films on (001) TiO 2 substrates with graded Ge x Sn 1− x O 2 buffer layers using mist chemical vapor deposition. The graded buffer layers expanded the growth temperature window from 550 °C to 850 °C and facilitated Sb doping for n -type conductivity. Secondary ion mass spectrometry confirmed the incorporation of Sb into the r-GeO 2 epilayer at a concentration of ∼10 21 cm −3 . This work contributes to the development of r-GeO 2 for power device applications.

Source: Japanese Journal of Applied Physics

DOI: 10.35848/1347-4065/add2b4

Authors: Kazuki Shimazoe, Ichiro Seike, Kazutaka Kanegae, Hiroyuki Nishinaka

Institution: Kyoto Institute of Technology

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $2,210

Funders: Japan Society for the Promotion of Science, Fusion Oriented REsearch for disruptive Science and Technology