Extreme bandgap polarization doped AlGaN layers on bulk AlN for pn-diodes with an 8.5 MV cm −1 breakdown field and forward current density exceeding 20 kA cm −2
Year: 2025
Type: article
Abstract: In this paper we present a study of distribution polarization doped Al x Ga 1− x N layers and their use in quasi-vertical configuration pn-diodes which exhibited a high breakdown field of ∼8.5 MV cm −1 and a large forward current density (∼23 kA cm −2 ). We also establish their potential use in UVC light emitters by studying the optical emission from a quantum well inserted at the distribution polarization doped pn-junction interface.
Authors: Tariq Jamil, Abdullah Al Mamun Mazumder, Muhammad Ali, Mafruda Rahman, Kenneth Stephenson, Grigory Simin, Asif Khan
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $2,210
Awards: G4613391790, G6288699182, G6967094621
OpenAlex ID: W4410009060