Work

High-Performance Negative Capacitance Field-Effect Transistors with Synthetic Monolayer MoS2

Year: 2025

Type: article

Source: ACS Nano

DOI: 10.1021/acsnano.4c18973

Authors: Moonyoung Jung, Hyo-Bae Kim, Yungyeong Park, Jeongmin Park, Hyeonseo Lee, Seunghyun Oh, Ki Kang Kim, Ji-Hoon Ahn, Yeonghun Lee, Junhong Na, Dongseok Suh

Institutions: Sungkyunkwan University, Hanyang University, Incheon National University, Kangwon National University, Ewha Womans University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Ewha Womans University, Ministry of Trade, Industry and Energy, National Research Foundation of Korea

Awards: G1264038472, G2048571071, G440975262, G6572784693, G6866332907, G7730734753, G7744784165, G7992540545

OpenAlex ID: W4410019765

FWCI: 2.266

Cites: 43

Cited by: 10

Related to: 10