Work

High-Storage, Low-Variability, and Low-Power Read-After-Write Superlattice HfO2/ZrO2 FeFET Memory Device by Using a Multifunctional MoOx/TiON Layer

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3560272

Authors: Zheng-Kai Chen, Miau-Hua Hsiung, Zi-Rong Huang, Sheng-Min Wang, Cheng-Rui Liu, Yu-Ting Chen, Chia-Shuo Pai, Yu-Tzu Tasi, Ying-Tsan Tang

Institution: National Central University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Science and Technology Council

OpenAlex ID: W4410027764

FWCI: 0.46

Cites: 40

Cited by: 2

Related to: 10