Work

Carrier transport properties of a SiC metal insulator semiconductor Schottky diode with a boron nitride layer

Year: 2025

Type: article

Abstract: A hexagonal boron nitride interlayer is grown on n-type SiC by plasma-enhanced chemical vapor deposition. Vertical metal–insulator–semiconductor diodes are fabricated and exhibited clear rectification, where Ion/Ioff is ∼109 at 300 K declining to ∼104 at 475 K. We report a leakage current of ∼10−12A(6×10−9A/cm2) and a RON of 33 mΩ cm2. The 1/C2 built-in voltage (Vbi) and threshold voltage (Vth) values are 2.4 and 2.3 V, respectively. The diode forward current mechanism is evaluated using the thermionic emission inhomogeneous barrier height model. The interface state density distribution (Nss) is estimated as 2×1013eV−1cm−2 from the forward bias I–V condition.

Source: Journal of Applied Physics

DOI: 10.1063/5.0254409

Authors: Ravi Ranjan Kumar, Shambel Abate Marye, Yao-Luen Shen, Chih-Fang Huang, Niall Tumilty

Institutions: National Yang Ming Chiao Tung University, National Tsing Hua University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $3,500

Funder: National Science and Technology Council