Year: 2025
Type: article
Abstract: Precisely controlling charge‐carrier polarity in 2D materials is crucial for high‐performance complementary circuits. With its moderate bandgap, 2H‐MoTe 2 enables tunable electron and hole injection, but stable n‐type conduction using low‐work‐function contacts without encapsulation has remained challenging. Here, a simple method is demonstrated to achieve stable n‐type polarity in 2H‐MoTe 2 using semimetallic Bi contacts. The n‐type behavior remains air‐stable without encapsulation, as DFT calculations reveal minimal metal‐induced gap states, allowing the Fermi level to shift near the conduction band. The n‐channel MoTe 2 devices achieve a maximum on‐state current of 18 µA and a high electron mobility of 64 cm 2 V − ¹s − ¹. By integrating n‐type MoTe 2 with Bi contacts and p‐type MoTe 2 with Au contacts, CMOS inverters, NOR, and NAND gates are realized, with the inverter showing a high DC voltage gain of 51. Additionally, a MoTe 2 p–n diode exhibits strong rectification (ratio ≈1.1 × 10 4 , ideality factor 1.07) and excellent broadband photoresponse. Under 900 nm light at 0.046 mW cm −2 , it achieves a responsivity of 0.25 A/W and detectivity of 6.3 × 10 10 Jones. This work enables MoTe 2 ‐based complementary circuits and photodiodes using only different contacts, simplifying 2D IC and optoelectronic device fabrication.
Source: Advanced Materials Technologies
Authors: Weijian Li, Enzi Chen, Dawei Li, Zhenye Lu, Xiaotong Zheng, Xiaoying Wang, Xi Wan, Kun Chen
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W4410049449