Work

P-Type Doped Si-Tip With Modulation and Extraction Gates for Precise Active Control of Stable Field Electron Emission

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3566756

Authors: Yang Chen, Yifeng Huang, Ningsheng Xu, Jun Chen, Shaozhi Deng, Juncong She

Institutions: Sun Yat-sen University, State Key Laboratory of Optoelectronic Materials and Technology

Language: English

Topic: Photocathodes and Microchannel Plates

Subfield: Biomedical Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Guangdong Province, National Key Research and Development Program of China

Awards: G2636929496, G5592415139, G7704845057

OpenAlex ID: W4410086838

FWCI: 1.173

Cites: 22

Cited by: 5

Related to: 10