Low-damage dry etching process of Sc-Sb-Te phase-change memory film using a chlorine-based reactive atmosphere
Year: 2025
Type: article
Source: Applied Physics Letters
DOI: 10.1063/5.0256478
Authors: Yongyong Che, Mingjian Zhong, Jianbin Liu, Keyuan Ding, Hao Liu, Jiatao Xie, Qianqian Qin, Minglong Liu, Peixu Liu, Xiaoyan Wei, Xiaotian Zhu, Peijiang Cao, Feng Rao
Institution: Shenzhen University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4410094215
