Work

Interface quality improvement of metal/AlOxNy/AlGaN/GaN MIS-heterojunction by using alternative AlOxNy growth in PEALD system

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0256227

Authors: Junmin Xue, Yu Li, Juan Xin, Yang Xiao, Heng Wang, Yujie Peng, Chen Wang, Zengyuan Wu, Qinqin Jing, Yaming Fan, Lihang Yin, Xiaodong Zhang, Yong Cai

Institutions: University of Science and Technology of China, Chinese Academy of Sciences, Suzhou Institute of Nano-tech and Nano-bionics, Peking University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Key Research and Development Program of Jiangxi Province

Award: G4151847856

OpenAlex ID: W4410094400

FWCI: 0.31

Cites: 26

Cited by: 1

Related to: 10