Work

1.5 kV β -Ga2O3 vertical Schottky diodes with 58 A surge current and off-state stressing study

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0260146

Authors: Yitao Feng, Hong Zhou, Sami Alghamdi, Saud Wasly, Yue Hao, Jincheng Zhang

Institutions: Xidian University, Guangzhou Institute of Technology, King Abdulaziz University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

SDGs: Affordable and clean energy, Industry, innovation and infrastructure

Open Access status: closed

Funders: National Natural Science Foundation of China, Basic and Applied Basic Research Foundation of Guangdong Province

Awards: G3441103351, G5286343900, G962364608

OpenAlex ID: W4410094501

FWCI: 2.608

Cites: 34

Cited by: 16

Related to: 10