Work

Thermal conductivity of SiO2 grown by plasma enhanced chemical vapor deposition

Year: 2025

Type: article

Abstract: SiO2 is a crucial material in silicon-based semiconductor devices, where efficient thermal management is essential. Reliable thermal conductivity for SiO2 grown by plasma enhanced chemical vapor deposition (PECVD) at different deposition temperatures remains lacking. In this study, we measured the thermal conductivity of PECVD-grown SiO2 to be 1.11–1.13 W m−1 K−1 at room temperature, with minimal dependence on the PECVD deposition temperature. Notably, PECVD-grown SiO2 exhibits higher thermal conductivity than SiO2 grown by other low-temperature process techniques. Moreover, we propose a revised equation based on the Cahill–Pohl model to calculate the minimum thermal conductivity of glasses. Our results provide valuable thermal conductivity data for PECVD SiO2 and emphasize the significance of specific heat capacity in the evaluation of minimum thermal conductivity.

Source: Journal of Applied Physics

DOI: 10.1063/5.0246816

Authors: Rongjie He, Bo Sun

Institutions: Tsinghua Shenzhen International Graduate School, Tsinghua University

Language: English

Topic: Thermal properties of materials

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $3,500

Funders: National Natural Science Foundation of China, Shenzhen Science and Technology Innovation Program, Guangdong Special Support Plan, Tsinghua Shenzhen International Graduate School