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Aluminum Scandium Nitride as a Functional Material at 1000 °C (Adv. Electron. Mater. 6/2025)

Year: 2025

Type: article

Abstract: Piezoelectrics Aluminum scandium nitride (AlScN) exhibits remarkable ferroelectric, piezoelectric, and dielectric stability at extreme temperatures. In article number 2400849, Roozbeh Tabrizian and co-workers demonstrate the robust performance of TaSi2/AlScN/TaSi2 capacitors up to 1000 °C, revealing a substantial increase in piezoelectricity and a marked reduction in coercive field. These findings establish AlScN as a key functional material for space, hypersonics, deep-well, and nuclear reactor applications.

Source: Advanced Electronic Materials

DOI: 10.1002/aelm.202570017

Authors: Venkateswarlu Gaddam, Shaurya S. Dabas, Jinghan Gao, David J. Spry, Garrett Baucom, Nicholas G. Rudawski, Tete Yin, Ethan Angerhofer, Philip G. Neudeck, Honggyu Kim, Philip X.‐L. Feng, Mark Sheplak, Roozbeh Tabrizian

Institutions: University of Florida, Glenn Research Center

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $3,560

OpenAlex ID: W4410101938

FWCI:

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