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Impact of surface passivation on the electrical stability of strained germanium devices

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Year: 2025
Type: article
Source: Chinese Physics B
DOI: 10.1088/1674-1056/add4de
Authors: Zong-Hu 宗祜 Li 李, Mao-Lin 茂粼 Wang 王, Zhen-Zhen 真真 Kong 孔, Gui-Lei 桂磊 Wang 王, Yuan 原 Kang 康, Yong-Qiang 永强 Xu 徐, Rui 睿 Wu 吴, Tian-Yue 天岳 Hao 郝, Ze-Cheng 泽成 Wei 魏, Bao-Chuan 保传 Wang 王, Hai-Ou 海欧 Li 李, Gang 刚 Cao 曹, Guo-Ping 国平 Guo 郭
Institutions: University of Science and Technology of China, CAS Key Laboratory of Quantum Information, USTC, Chinese Academy of Sciences, Institute of Microelectronics, University of Chinese Academy of Sciences, Origin Quantum Computing Technology Company (China)
Language: English

Topic: Quantum and electron transport phenomena
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences

Open Access status: closed
OpenAlex ID: W4410109727
FWCI: 0.741
Cites: 42
Cited by: 2
Related to: 10
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