Work

Strain engineering of vertical (110) InGaAs/InP quantum wells laterally grown on (001) SOI

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0263330

Authors: Zili Lei, Donghui Fu, Yu Han, Siyuan Yu

Institutions: Sun Yat-sen University, State Key Laboratory of Optoelectronic Materials and Technology

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G1230071142, G2129779994, G7174990873

OpenAlex ID: W4410116574

FWCI: 3.334

Cites: 28

Cited by: 9

Related to: 10