Work

Carrier Density Induced Metal–Insulator Transition in Bi2O2Se Nanosheets

Year: 2025

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.5c00264

Authors: Suraj Lakhchaura, Gokul M. Anilkumar, Atikur Rahman

Institutions: Indian Institute of Science Education and Research, Bhopal, IHub, University of Southern California

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Indo-French Centre for the Promotion of Advanced Research, Science and Engineering Research Board

Awards: G5007121732, G841130464

OpenAlex ID: W4410120102

FWCI: 0.636

Cites: 45

Cited by: 3

Related to: 10