Year: 2025
Type: article
Abstract: The impact of rhenium doping on the transport properties and electron localization in monolayer graphene was experimentally investigated. In this study, we report the emergence of unsaturated negative magnetoresistance in Re-doped graphene devices, which is observed exclusively at low temperatures. Moreover, angle-dependent measurements reveal a pronounced anisotropy in the negative magnetoresistance. This phenomenon is attributed to the disorder and localized magnetic moments introduced by Re doping, which lead to charge carrier localization and are accompanied by substantial magnetocrystalline anisotropy energy.
Source: Magnetochemistry
Authors: Ying Zhang, Jiali You, Weiwei Li, Zijie Huang, Yuxiang Feng, Yuyu Liu, Jing Li
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,654
Award: G457678110
OpenAlex ID: W4410128659