Work

Investigating the Saturation Phenomenon of the Drain-Induced Barrier Lowering Effect on AlGaN/GaN High Electron Mobility Transistors with Schottky-Gate Structures

Year: 2025

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.5c00505

Authors: Po-Hsun Chen, Tsung-Han Yeh, Cheng-Hsien Lin, Kai-Chun Chang

Institutions: National Sun Yat-sen University, I-Shou University, National Defense University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Science and Technology Council

Awards: G1890669242, G4981278515

OpenAlex ID: W4410131593

FWCI:

Cites: 38

Cited by:

Related to: 10