Year: 2025
Type: article
Abstract: Multilayer nanoscale systems incorporating ultrathin tunnel barriers, magnetic materials, amorphous oxides, and promising dielectrics are essential for next-generation logics, memory, quantum, and neuro-inspired computing. Still, an ultrathin film control at the atomic scale remains challenging. Here, we introduce a complementary metal-oxide semiconductor-compatible approach using focused ion beam irradiation for buried ultrathin films' engineering with subangstrom thickness control. Molecular dynamics simulations confirm the pivotal role of ion-induced crystal defects. Its performance is exemplified by Josephson junction resistance tuning in the range of 2 to 37% with a 0.86% standard deviation in completed chips. Furthermore, it enables ±17-megahertz frequency accuracy (±0.172 angstrom tunnel barrier thickness variation) in superconducting multiqubit processors, as well as qubit energy relaxation and echo coherence times exceeding 0.5 milliseconds.
Source: Science Advances
Authors: Nikita S. Smirnov, Elizaveta A. Krivko, Daria A. Moskaleva, Dmitry O. Moskalev, Anastasia A. Solovieva, Aleksei R. Matanin, Vladimir V. Echeistov, Аnton I. Ivanov, Elizaveta I. Malevannaya, Viktor I. Polozov, Evgeny V. Zikiy, Nikita D. Korshakov, Maksim I. Teleganov, Dmitry A. Mikhalin, Nikolai M. Zhitkov, Ruslan V. Romashkin, Igor S. Korobenko, Aleksei V. Yanilkin, Аndrey V. Lebedev, Ilya A. Ryzhikov, Aleksander V. Andriyash, Ilya A. Rodionov
Language: English
Subfield: Computational Mechanics
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $4,500
OpenAlex ID: W4410140301