Work

755 nm InP/GaAs 0.65 P 0.35 quantum dot laser with polarization-dependent emission from type-I and type-II band alignments

Year: 2025

Type: article

Abstract: InP/GaAs 0.65 P 0.35 quantum dot (QD) lasers with variable polarization are demonstrated through the tailoring of band alignment. Different band alignments of type-I and type-II are realized during QD growth with varied parameters. The energy shift of type-I structure is observed to be much lower than that of type-II. Furthermore, type-I and type-II band ridge waveguide lasers were investigated. For type-I and type-II band lasers, the lowest thresholds are 0.37 and 0.40 kA/cm 2 , respectively, and different polarization characteristics are achieved. We observed transverse electric (TE) and transverse magnetic (TM) polarized light resulted from different band alignments, and the degree of polarization (DOP) reached 80%. These results indicate that InP/GaAs 0.65 P 0.35 QDs can be potentially used in devices with desired polarization.

Source: Optics Express

DOI: 10.1364/oe.563529

Authors: Wen Gu, Boqun Zhao, Ying Xue, Kei May Lau

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,270

Funder: Innovation and Technology Fund

Award: Semiconductor Quantum Dot Lasers Emitting in the Red