Work

Physics-based analytical models for p-GaN/AlGaN/GaN HEMTs considering gate charge emission

Year: 2025

Type: article

Source: Journal of Physics D Applied Physics

DOI: 10.1088/1361-6463/add544

Authors: Nadim Ahmed, Gourab Dutta

Institutions: Indian Institute of Technology Kharagpur, Jadavpur University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Science and Engineering Research Board, Sponsored Research and Industrial Consultancy

Award: G5533744154

OpenAlex ID: W4410142974

FWCI:

Cites: 39

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Related to: 10