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Hf0.5Zr0.5O2-Based Ferroelectric Tunnel Junction as an Artificial Synapse for Speech Recognition

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Year: 2025
Type: article
Source: ACS Applied Materials & Interfaces
DOI: 10.1021/acsami.5c01547
Authors: Yuanzhenzi Lu, Zeyu Guan, Bo Xu, Shengchun Shen, Yuewei Yin, Xiaoguang Li
Institutions: University of Science and Technology of China, Collaborative Innovation Center of Advanced Microstructures, Nanjing University
Language: English

Topic: Advanced Memory and Neural Computing
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China
Awards: G2809949575, G2853204155, G4549154055, G4989509263, G6712538838
OpenAlex ID: W4410148598
FWCI: 3.842
Cites: 66
Cited by: 17
Related to: 10
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