Work

Highly Sensitive Thermal Sensor Design Using a Gate-Bias-Controlled TCR in MoSe2 FET

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3564929

Authors: Shubham Saxena, Sumit Sharma, Biswajit Khan, Nitish Kumar, Samaresh Das, V. Ramgopal Rao

Institution: Indian Institute of Technology Delhi

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4410153220

FWCI: 0.424

Cites: 42

Cited by: 2

Related to: 10