Work

Giant Rabi frequencies between qubit and excited hole states in silicon quantum dots

Year: 2025

Type: article

Abstract: Holes in Si quantum dots are being investigated for the implementation of electrically addressable spin qubits. In this perspective, the attention has been focused on the electric-field induced transitions between the eigenstates belonging to the ground doublet. Here we theoretically extend the analysis to the first excited doublet. We show that---in a prototypical quantum dot structure---transitions involving the lowest excited states display Rabi frequencies that are several orders of magnitude larger than that of the transition between states of the ground doublet. A clear relation with the symmetries of the eigenstates emerges, as well as a wide tunability of the Rabi frequencies by means of the applied bias. A preliminary discussion on the possible implications of the present results for multilevel manipulation schemes and for multihole qubit encodings is provided.

Source: Physical review. B./Physical review. B

DOI: 10.1103/physrevb.111.205409

Authors: Eleonora Fanucchi, Gaia Forghieri, Andrea Secchi, Paolo Bordone, Filippo Troiani

Institutions: University of Modena and Reggio Emilia, Istituto Nanoscienze

Language: English

Topic: Quantum and electron transport phenomena

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

Funder: Ministero dell'Università e della Ricerca

Awards: G1648780019, G3781801761, G598502428, G6706401475