First demonstration of leaky-integrate and fire neuron based GAA nanosheet FET with ultra-low energy consumption down to 0.8fJ/spike for spiking neural network applications
Year: 2025
Type: article
Source: Physica Scripta
Institution: National Institute of Technology Warangal
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4410198176
