Work

Cross Field-Effect Transistor With Adjustable Threshold Voltage and High Ring-Oscillator Frequency

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3564921

Authors: Ming-Yu Chang, Yi-Ting Wu, Fei Ding, Meng-Hsueh Chiang

Institutions: National Cheng Kung University, Intel (United States), University of California, Berkeley

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Science and Technology Council

Award: G2951060354

OpenAlex ID: W4410204520

FWCI: 0.693

Cites: 32

Cited by: 3

Related to: 10