Work

Inspection of Bulk Crystals for Quality Control in Crystal Growth: Assessment of High-Energy X-Ray Transmission Topography and Back-Reflection Topography Pinpointed for Physical Vapor Transport-Grown Aluminum Nitride

Year: 2025

Type: article

Abstract: A comprehensive X-ray topography analysis of two selected aluminum nitride (AlN) bulk crystals is presented. We compare surface inspection X-ray topography in back-reflection geometry with high-energy transmission topography in the Lang and Laue configuration using the monochromatic Kα1 excitation wavelength of copper, silver, and tungsten, respectively. A detailed comparison of the results allows the assessment of both the high- and low-energy X-ray topography methods with respect to performance and structural information, giving essential feedback for crystal growth. This is demonstrated for two selected AlN freestanding faceted crystals up to 8 mm in thickness grown in all directions using the physical vapor transport (PVT) method. Structural defects of all facets of the crystals are determined using the X-ray topography in back-reflection geometry. The mean threading dislocation densities are 480 ± 30 cm−2 for both crystals of either the Al- or N-face. Clustering of dislocations could be observed. The m-facets show the presence of basal plane dislocations and their accumulation as clusters. The integral transmission topographs of the 101¯0 (m-plane) reflection family show that basal plane dislocations of the screw type in 131¯21¯0 directions decorate threading dislocation clusters. Three-dimensional section transmission topography reveals that the basal plane dislocation clusters mainly originate at the seed boundary and propagate in the 131¯21¯0 direction along the growth front. In newly laterally grown material, the Borrmann effect has been observed for the first time in PVT-grown bulk AlN, indicating very high structural perfection of the crystalline material in this region. This agrees with a low mean FWHM of 10.6 arcsec of the 101¯0 reflection determined through focused high-energy Laue transmission mappings. The latter method also opens the analysis of the ∆2θ-shift correlated to the residual stress distribution inside the bulk crystal, which is dominated by dislocation clusters. Contrary to Lang transmission topography, the de-focused high-energy Laue transmission penetrates the 8 mm-thick crystal enabling a defect analysis in the bulk.

Source: Crystals

DOI: 10.3390/cryst15050449