Work

Photoelectric properties of heterojunctions based on semiconducting metal oxides and indium selenide

Year: 2025

Type: article

Abstract: The results of a comparison of the photosensitivity of heterojunctions based on InSe layered semiconductor and various wide band gap oxides (Mn2O3, CuFeO2, Fe2O3) produced by the spray pyrolysis method are given. The photoresponse of the heterojunction irradiated from the side of metal oxides was studied in the photon energy range of 1.2÷3 eV. The possibility of the formation of In2Se3 phase between of InSe and oxides and its effect on the photosensitivity of the heterostructures have been considered.

Source: Physics and Chemistry of Solid State

DOI: 10.15330/pcss.26.2.231-234

Authors: I.G. Tkachuk, I.G. Orletskii, Z.D. Kovalyuk, V.I. Ivanov, A.V. Zaslonkin, B.V. Kusnir

Institutions: National Academy of Sciences of Ukraine, Bukovinian State Medical University, Frantsevich Institute for Problems in Materials Science, Yuriy Fedkovych Chernivtsi National University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: diamond

OpenAlex ID: W4410219026

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