Work

Improved DC/RF Performance in AlN/GaN/AlGaN/SiC MOSHEMTs With TiO2 as a Gate Dielectric

Year: 2025

Type: conference-paper

Source: IEEE International Conference on Interdisciplinary Approaches in Technology and Management for Social Innovation (IATMSI)

DOI: 10.1109/iatmsi64286.2025.10984461

Authors: Gauri Deshpande, J. Ajayan, Sandip Bhattacharya

Institution: SR University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4410227653

FWCI:

Cites: 12

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Related to: 10