Work

Impact of Doping Profile Engineering for Enhanced Performance in Nanosheet Field Effect Transistors

Year: 2025

Type: conference-paper

Source: IEEE International Conference on Interdisciplinary Approaches in Technology and Management for Social Innovation (IATMSI)

DOI: 10.1109/iatmsi64286.2025.10985508

Authors: Akansha Aggarwal, Gagan, Devender Kumar Soni, Himanshu Marothya

Institutions: Jamia Millia Islamia, Kurukshetra University, Indian Institute of Technology Bombay

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4410229239

FWCI:

Cites: 28

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Related to: 10