Properties of barium titanate films deposited on silicon substrates via RF magnetron sputtering
Year: 2025
Type: conference-paper
Abstract: As an essential element in optical interconnects, the fabrication of high-quality thin films compatible with CMOS processes is pivotal for realizing electro-optic modulators with ultra-fast operation and low-voltage requirements. In this work, BaTiO3 thin films were synthesized on single-crystal silicon substrates through RF-MS. The influence of process parameters and post-treatment annealing procedures on the crystallinity and microstructure of the films were systematically studied. By optimizing the process conditions, the prepared BaTiO3 films exhibited <211> preferred orientation, with a half-peak width of 0.271° and an average grain size of 42.3 nm, indicating high crystalline quality. This study provides essential material support for the development of Si-based photonic integration technology and “rapid-response, low-power-consumption” electro-optic modulators.
Authors: Zhengjie Zhang, Ruoxi Zhang, Feng Zhang, Xinguo Ma, Zhiwen Liu, Zhengwang Cheng, Hao Hu
Institutions: Hubei University of Technology, Hubei Jiufengshan Laboratory
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: diamond
Funder: Chinese Academy of Sciences
OpenAlex ID: W4410231760