Work

Site occupation of Al doping in Lu2SiO5: The role of ionic radius versus chemical valence

Year: 2025

Type: article

Source: Chinese Physics B

DOI: 10.1088/1674-1056/add678

Authors: Xuejiao 雪娇 Sun 孙, Yu 宇 Cui 崔, Feng 峰 Gao 高, Zhongjun 中军 Xue 薛, Shuwen 书文 Zhao 赵, Dongzhou 栋舟 Ding 丁, Fan 帆 Yang 杨, Yi-Yang 宜阳 Sun 孙

Institutions: Chinese Academy of Sciences, Changchun Normal University, Shanghai Institute of Ceramics, State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Nankai University

Language: English

Topic: Radiation Detection and Scintillator Technologies

Subfield: Radiation

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4410241081

FWCI:

Cites: 29

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Related to: 10