Performance Enhancement of Gallium Nitride High Electron Mobility Transistor for High Frequency Applications Using AlInGaN as Back Barrier Layer
Year: 2025
Type: article
Source: physica status solidi (a)
Authors: Poreddy Chaitanya Akshara, Ramakant Yadav, Vydya Ram Prasad
Institution: Mahindra University
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4410266459