Work

Numerical Simulation of CMOS Inverter using Gallium Nitride (GaN)

Year: 2025

Type: conference-paper

DOI: 10.1109/ictmim65579.2025.10988347

Authors: M. Sentamilselvi, Kavimani K, Logeshwaran J, Manoj M. T, Mohanaprasath K. R

Institution: M. Kumarasamy College of Engineering

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4410295229

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