Work

Fowler-Nordheim stress-induced degradation in n-channel MOSFETs

Year: 2025

Type: conference-paper

Source: International Youth Conference on Radio Electronics, Electrical and Power Engineering (REEPE)

DOI: 10.1109/reepe63962.2025.10971001

Authors: Igor V. Chukhraev, Dmitry V. Mastykash, Vladimir E. Drach

Institutions: Bauman Moscow State Technical University, Sochi State University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4410297724

FWCI: 2.3

Cites:

Cited by: 1

Related to: 10