Work

Study of Hybrid Schottky – Ohmic Source and Drain AlGaN/GaN HEMTs for Low Noise Application

Year: 2025

Type: conference-paper

Source: German Microwave Conference

DOI: 10.23919/gemic64734.2025.10979020

Authors: Neng-Da Li, Ho-Hsin Chang, Chih-Hao Yang, Yueh-Chin Lin, Edward Yi Chang

Institution: National Yang Ming Chiao Tung University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Ministry of Science and Technology

OpenAlex ID: W4410342887

FWCI:

Cites: 9

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Related to: 10