Work

Tuning of spin-transfer torque in VSe2-based vdW magnetic tunnel junctions by electrode polytypes

Year: 2025

Type: article

Abstract: Inspired by the promising properties of monolayer 1T-VSe$_2$, known for its ferromagnetic ordering and Curie temperature above room temperature, we developed a 2D van der Waals heterostructure featuring VSe$_2$ as the ferromagnetic layer, flanked by non-magnetic TaS$_2$ electrodes and MoS$_2$ as the tunneling barrier. Using \emph{ab initio} quantum transport simulations within the nonequilibrium Green’s function framework, we explored the impact of TaS$_2$ electrode polytypes on the device's quantum transport properties. Our results reveal that devices with 1T-TaS$_2$ electrodes exhibit higher spin-dependent transmission compared to 2H-TaS$_2$ electrodes. Incorporating MoS$_2$ enhances anisotropic tunnel magnetoresistance significantly, reaching 168\% for the 1T-device and 1419\% for the 2H-device, peaking when VSe$_2$ layers' magnetizations are antiparallel. Spin-transfer torque (STT) analysis shows that STT magnitude is highest at 90$^\circ$ ($-702~\mu$eV/V for 1T and $-1561~\mu$eV/V for 2H devices) and decreases towards 180$^\circ$. The 1T-device shows superior performance with lower Gilbert damping, reduced critical current density and voltage for magnetization switching, compared to the 2H-device, which requires significantly higher current and voltage. These findings underscore the potential of 1T-VSe$_2$-based heterostructures for advanced spintronic applications.

Source: npj 2D Materials and Applications

DOI: 10.1038/s41699-025-00560-6

Authors: Masoumeh Davoudiniya, Biplab Sanyal

Institution: Uppsala University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $3,405