Year: 2025
Type: article
Abstract: The ALD precursor tetrakis(dimethylamido)tin and water are exploited towards the atomic-layer additive manufacturing (ALAM) of SnO 2 lines.
Source: Materials Advances
DOI: 10.1039/d5ma00182j
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $1,962
Funder: Deutsche Forschungsgemeinschaft
Awards: G1386772601, G967606689
OpenAlex ID: W4410378053
