Work

Multiscale Modeling and Calibration of Hot-Carrier Stress Degradation in SiGe DRAM Peripheral MOSFETs

Year: 2025

Type: conference-paper

Source: IEEE International Reliability Physics Symposium proceedings

DOI: 10.1109/irps48204.2025.10983620

Authors: L. Silvestri, S. Jin, W. Jeong, H. Shim, W. Yim, H. Kwon, D. Oh, S. Son, N. Zographos, N. Kim, X.-W. Lin, L. Sponton, Y. Lee

Institutions: Synopsys (Switzerland), SK Hynix (South Korea), Synopsys (United States)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4410394245

FWCI:

Cites: 14

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Related to: 10