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Reliability Performances Tuning in Ge-rich GeSbTe Phase-Change Memory Thanks to Multilayered Ge//GeSbTe Stacks

Year: 2025

Type: conference-paper

Source: IEEE International Reliability Physics Symposium proceedings

DOI: 10.1109/irps48204.2025.10983396

Authors: N-A. Nguyen, O. Daoudi, M. Bernard, L. Fellouh, M. Tessaire, C. Sabbione, Z. Saghi, T. Monniez, C. De Camaret, E. Nolot, G. Bourgeois, A. Salvi, S. Gout, F. Andrieu, G. Navarro

Institutions: Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Laboratoire d'Électronique des Technologies de l'Information, Université Grenoble Alpes

Language: English

Topic: Phase-change materials and chalcogenides

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: Electronic Components and Systems for European Leadership

Award: G2488644748

OpenAlex ID: W4410394261

FWCI: 5.131

Cites: 13

Cited by: 1

Related to: 10