Work

Comprehensive Analysis of Deep level Effects and in-situ Photoionization in 0.15 $\mu \mathrm{m}$ buffer-free AIGaN/GaN HEMTs for RF applications

Year: 2025

Type: conference-paper

Source: IEEE International Reliability Physics Symposium proceedings

DOI: 10.1109/irps48204.2025.10983862

Authors: Francesco De Pieri, Manuel Fregolent, Marco Saro, Andrea Carlotto, Mirco Boito, Carlo De Santi, Fabiana Rampazzo, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni

Institution: University of Padua

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Office of Naval Research

Award: G3938834931

OpenAlex ID: W4410394307

FWCI: 5.181

Cites: 14

Cited by: 2

Related to: 10