Work

Degradation Mechanism Analysis and Modeling of SiC MOSFETs Under 60Co Gamma Ray Total Ionizing Dose Irradiation

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3566690

Authors: Runding Luo, Yuhan Duan, Tao Luo, Yifei Chang, Wenhua Shi, Xiaoyan Xu, Jianjun Zhuang, Guoqi Zhang, Jiajie Fan

Institutions: Fudan University, Delft University of Technology

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G4310661758

OpenAlex ID: W4410394657

FWCI: 1.36

Cites: 33

Cited by: 6

Related to: 10