Work

Comprehensive Analysis of DC, Pulsed, and RF Performance of Submicron GaN-on-Si MIS-HEMTs Under Gamma Radiation

Year: 2025

Type: conference-paper

Source: IEEE International Reliability Physics Symposium proceedings

DOI: 10.1109/irps48204.2025.10982905

Authors: Anant Johari, Chin-Ya Su, Der-Sheng Chao, Ankur Gupta, Rajendra Singh, Tian-Li Wu

Institutions: National Yang Ming Chiao Tung University, National Tsing Hua University, Indian Institute of Technology Delhi

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4410394682

FWCI: 5.181

Cites: 22

Cited by: 2

Related to: 10