Work

Investigation of Screening Methods for 1.2 kV 4H-SiC MOSFETs Using High Gate Voltage Pulses and Unclampled Inductive Switching

Year: 2025

Type: conference-paper

Source: IEEE International Reliability Physics Symposium proceedings

DOI: 10.1109/irps48204.2025.10983694

Authors: Seung Yup Jang, Justin Lynch, Adam J. Morgan, Dinuth C. Y. B. Yapa Mudiyanselage, Woongje Sung, Limeng Shi, Anant K. Agarwal

Institutions: University at Albany, State University of New York, The Ohio State University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4410395117

FWCI:

Cites: 12

Cited by:

Related to: 10