Work

Copper Damascene Based Heterogeneous Integration of GaN with CMOS on 200 mm Si Substrates (Invited)

Year: 2025

Type: conference-paper

Source: IEEE International Reliability Physics Symposium proceedings

DOI: 10.1109/irps48204.2025.10983349

Authors: Jeffrey LaRoche, Lovelace Soirez, Eduardo Chumbes

Institution: Raytheon (United States)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4410395239

FWCI: 5.181

Cites: 1

Cited by: 2

Related to: 10