Work

Record-Low EOT(3.6Å) & J leak (7×10 -8 A/cm 2 @0.8V) HZO by Dielectric-Selective Microwave Annealing

Year: 2025

Type: conference-paper

Source: IEEE International Reliability Physics Symposium proceedings

DOI: 10.1109/irps48204.2025.10983902

Authors: Hunbeom Shin, Giuk Kim, Sujeong Lee, Geonhyeong Kang, Hyojun Choi, Taeseung Jung, Sanghun Jeon, Hyung-Jun Kim, Jinho Ahn

Institutions: Korea Advanced Institute of Science and Technology, Samsung Advanced Institute of Technology (South Korea), Samsung Electronics (South Korea), Hanyang University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4410395241

FWCI: 9.201

Cites: 18

Cited by: 4

Related to: 10