Work

Retention Analysis of Ferroelectric FETs with Gate-Side Injection for Vertical NAND Storage

Year: 2025

Type: conference-paper

Source: IEEE International Reliability Physics Symposium proceedings

DOI: 10.1109/irps48204.2025.10983219

Authors: Yixin Qin, Saikat Chakraborty, Zijian Zhao, Sizhe Ma, Moonyoung Jung, Kijoon Kim, Suhwan Lim, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Vijaykrishnan Narayanan, Jaydeep P. Kulkarni, Kai Ni

Institutions: University of Notre Dame, The University of Texas at Austin, Samsung Electronics (South Korea), Pennsylvania State University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Science Foundation

Award: Collaborative Research: FET: Medium:Compact and Energy-Efficient Compute-in-Memory Accelerator for Deep Learning Leveraging Ferroelectric Vertical NAND Memory

OpenAlex ID: W4410395293

FWCI: 6.831

Cites: 18

Cited by: 3

Related to: 10