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3 Factor Accelerated Lifetime Testing in Lateral GaN Power HEMTs: A Tutorial

Year: 2025

Type: conference-paper

Source: IEEE International Reliability Physics Symposium proceedings

DOI: 10.1109/irps48204.2025.10983437

Authors: S. Wienecke, R. Barr, W. Cruse, A. Wong, L. Shen, P. Smith, K. Shono, R. Lal, G. Gupta, D. Bisi, C. Neufeld

Institutions: Renesas Electronics (United States), Renesas Electronics (Japan)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4410395347

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Cites: 6

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Related to: 10